NCE50NF130K Specs and Replacement

Type Designator: NCE50NF130K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 186 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 630 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: TO252

NCE50NF130K substitution

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NCE50NF130K datasheet

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 nce50nf130k.pdf pdf_icon

NCE50NF130K

NCE50NF130K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i... See More ⇒

 4.1. Size:716K  ncepower
 nce50nf130v.pdf pdf_icon

NCE50NF130K

NCE50NF130V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i... See More ⇒

 4.2. Size:712K  ncepower
 nce50nf130f.pdf pdf_icon

NCE50NF130K

NCE50NF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i... See More ⇒

 4.3. Size:744K  ncepower
 nce50nf130ll.pdf pdf_icon

NCE50NF130K

NCE50NF130LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and ... See More ⇒

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Detailed specifications: NCE50N2K2D, NCE50N2K2F, NCE50N2K2I, NCE50N2K2K, NCE50N2K2R, NCE50N540K, NCE50NF130D, NCE50NF130F, IRFP250N, NCE50NF130LL, NCE50NF130T, NCE50NF130V, NCE50NF180, NCE50NF180D, NCE50NF180F, NCE50NF180I, NCE50NF180K

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