All MOSFET. NCE50NF180I Datasheet

 

NCE50NF180I MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE50NF180I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 129 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO251

 NCE50NF180I Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE50NF180I Datasheet (PDF)

 ..1. Size:797K  ncepower
nce50nf180i.pdf

NCE50NF180I
NCE50NF180I

NCE50NF180IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 150 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and indus

 4.1. Size:812K  ncepower
nce50nf180.pdf

NCE50NF180I
NCE50NF180I

NCE50NF180N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 150 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and indust

 4.2. Size:804K  ncepower
nce50nf180k.pdf

NCE50NF180I
NCE50NF180I

NCE50NF180KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 150 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and indus

 4.3. Size:801K  ncepower
nce50nf180d.pdf

NCE50NF180I
NCE50NF180I

NCE50NF180DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 150 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and indus

 4.4. Size:856K  ncepower
nce50nf180f.pdf

NCE50NF180I
NCE50NF180I

NCE50NF180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 150 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and indus

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AM10P20-1400D

 

 
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