All MOSFET. NCE50NF220F Datasheet

 

NCE50NF220F Datasheet and Replacement


   Type Designator: NCE50NF220F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 13.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 19 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: TO-220F
 
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NCE50NF220F Datasheet (PDF)

 ..1. Size:853K  ncepower
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NCE50NF220F

NCE50NF220FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and ind

 4.1. Size:784K  ncepower
 nce50nf220k.pdf pdf_icon

NCE50NF220F

NCE50NF220KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and ind

 4.2. Size:778K  ncepower
 nce50nf220i.pdf pdf_icon

NCE50NF220F

NCE50NF220IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and ind

 4.3. Size:815K  ncepower
 nce50nf220d.pdf pdf_icon

NCE50NF220F

NCE50NF220DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and ind

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