All MOSFET. NCE50NF520D Datasheet

 

NCE50NF520D Datasheet and Replacement


   Type Designator: NCE50NF520D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7.2 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: TO263
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NCE50NF520D Datasheet (PDF)

 ..1. Size:816K  ncepower
 nce50nf520d.pdf pdf_icon

NCE50NF520D

NCE50NF520DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 7.2 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu

 4.1. Size:786K  ncepower
 nce50nf520k.pdf pdf_icon

NCE50NF520D

NCE50NF520KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 7.2 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu

 4.2. Size:794K  ncepower
 nce50nf520.pdf pdf_icon

NCE50NF520D

NCE50NF520N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 7.2 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indus

 4.3. Size:780K  ncepower
 nce50nf520i.pdf pdf_icon

NCE50NF520D

NCE50NF520IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 550 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 7.2 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu

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History: APT6010B2LLG | HLML6401 | IXFR15N100Q3 | STB32NM50N | SSM3K15F | STS4DPFS30L | AP85T03GH-HF

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