NCE6003X MOSFET Datasheet: N-Ch, 60V, 3A. Full specification with pinout and replacement list

NCE6003X Specs and Replacement

   Type Designator: NCE6003X
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SOT-23

NCE6003X substitution

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NCE6003X datasheet

..1. Size:642K ncepower
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http //www.ncepower.com NCE6003X NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE6003X uses advanced trench technology to provide G excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S Schematic Diagram General Features V =60V,I =3A DS D R ... See More ⇒

0.1. Size:671K ncepower
nce6003xm.pdf pdf_icon

http //www.ncepower.com NCE6003XM NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE6003XM uses advanced trench technology to provide excellent R , low gate charge. This device is suitable for DS(ON) G use as a Battery protection or in other switching application. S General Features Schematic Diagram V =60V,I =3A DS D R ... See More ⇒

0.2. Size:706K ncepower
nce6003xy.pdf pdf_icon

http //www.ncepower.com NCE6003XY NCE N-Channel Enhancement Mode Power MOSFET D Description G The NCE6003XY uses advanced trench technology to provide excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S Schematic Diagram General Features V =60V,I =3A DS D R ... See More ⇒

7.1. Size:260K ncepower
nce6003m.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE6003M NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S General Feature Schematic diagram ... See More ⇒