NCE6003XY Specs and Replacement

Type Designator: NCE6003XY

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 16 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.096 Ohm

Package: SOT-23

NCE6003XY substitution

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NCE6003XY datasheet

 ..1. Size:706K  ncepower
 nce6003xy.pdf pdf_icon

NCE6003XY

http //www.ncepower.com NCE6003XY NCE N-Channel Enhancement Mode Power MOSFET D Description G The NCE6003XY uses advanced trench technology to provide excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S Schematic Diagram General Features V =60V,I =3A DS D R ... See More ⇒

 6.1. Size:671K  ncepower
 nce6003xm.pdf pdf_icon

NCE6003XY

http //www.ncepower.com NCE6003XM NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE6003XM uses advanced trench technology to provide excellent R , low gate charge. This device is suitable for DS(ON) G use as a Battery protection or in other switching application. S General Features Schematic Diagram V =60V,I =3A DS D R ... See More ⇒

 6.2. Size:642K  ncepower
 nce6003x.pdf pdf_icon

NCE6003XY

http //www.ncepower.com NCE6003X NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE6003X uses advanced trench technology to provide G excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S Schematic Diagram General Features V =60V,I =3A DS D R ... See More ⇒

 7.1. Size:260K  ncepower
 nce6003m.pdf pdf_icon

NCE6003XY

Pb Free Product http //www.ncepower.com NCE6003M NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S General Feature Schematic diagram ... See More ⇒

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Detailed specifications: NCE50NF600F, NCE50NF600I, NCE50NF600K, NCE50NF600R, NCE5520Q, NCE55P15, NCE6003X, NCE6003XM, BS170, NCE6005AN, NCE6007S, NCE6009XS, NCE6010J, NCE6012CS, NCE6020A, NCE6020AL, NCE6020AQ

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