All MOSFET. NCE6005AN Datasheet

 

NCE6005AN MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE6005AN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SOT-23

 NCE6005AN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE6005AN Datasheet (PDF)

 ..1. Size:707K  ncepower
 nce6005an.pdf

NCE6005AN NCE6005AN

NCE6005ANhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6005AN uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =5ADS DR

 6.1. Size:417K  ncepower
 nce6005as.pdf

NCE6005AN NCE6005AN

Pb Free Producthttp://www.ncepower.com NCE6005ASNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS=60V,ID=5A RDS(ON)

 6.2. Size:315K  ncepower
 nce6005ar.pdf

NCE6005AN NCE6005AN

Pb Free Producthttp://www.ncepower.com NCE6005ARNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS=60V,ID=5A RDS(ON)

 6.3. Size:915K  cn vbsemi
 nce6005as.pdf

NCE6005AN NCE6005AN

NCE6005ASwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channe

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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