NCE6058K MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE6058K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 58 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 60 nC
trⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 181 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO-252
NCE6058K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE6058K Datasheet (PDF)
nce6058k.pdf
http://www.ncepower.comNCE6058KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6058K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =58ADS DR
nce6058.pdf
Pb Free Producthttp://www.ncepower.com NCE6058NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6058 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =58A RDS(ON)
nce6058ak.pdf
http://www.ncepower.comNCE6058AKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6058AK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =58ADS DR
nce6050ka.pdf
Pb Free Producthttp://www.ncepower.com NCE6050KANCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)
nce6050a.pdf
Pb Free Producthttp://www.ncepower.com NCE6050ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)
nce6050ia.pdf
Pb Free Producthttp://www.ncepower.com NCE6050IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918