All MOSFET. NCE6080AK Datasheet

 

NCE6080AK Datasheet and Replacement


   Type Designator: NCE6080AK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-252
 

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NCE6080AK Datasheet (PDF)

 ..1. Size:600K  ncepower
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NCE6080AK

Pb Free ProductNCE6080AKhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080AK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR =6m (typical) @ V =10V Schematic diagramDS(ON) GSR =7m (typical) @ V =

 6.1. Size:393K  ncepower
nce6080a.pdf pdf_icon

NCE6080AK

Pb Free ProductNCE6080Ahttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)=6.5m (typical) @ VGS=10V Schematic diagram RDS(ON)=7.5m (typica

 6.2. Size:801K  ncepower
nce6080at.pdf pdf_icon

NCE6080AK

Pb Free ProductNCE6080AThttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080AT uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR =5.5m (typical) @ V =10VDS(ON) GSR =6.5m (typical) @ V =4.5VDS(ON) G

 6.3. Size:757K  ncepower
nce6080ai.pdf pdf_icon

NCE6080AK

http://www.ncepower.com NCE6080AINCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE6080AI uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =80ADS DR =5.5m (typical) @ V =10V Schematic diagramDS(ON) GSR =6.5m (typical) @ V =4.5VDS(ON) G

Datasheet: NCE6045XG , NCE6058 , NCE6058AK , NCE6058K , NCE6065AG , NCE6065G , NCE6080 , NCE6080AI , IRFZ48N , NCE6080AT , NCE6080ED , NCE6080EK , NCE60H10 , NCE60H10D , NCE60H10K , NCE60H15AT , NCE60H15T .

History: SLP16N50S | ELM14430AA | IXTH6N150 | RJK0629DPE | HGN036N08SL | LDN9926ET1G | AM2312N

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