NCE60H18 Specs and Replacement

Type Designator: NCE60H18

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 820 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO220

NCE60H18 substitution

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NCE60H18 datasheet

 ..1. Size:638K  ncepower
 nce60h18.pdf pdf_icon

NCE60H18

http //www.ncepower.com NCE60H18 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H18 uses advanced trench technology and design to provide excellent R with low gate charge. This device is DS(ON) suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features V =60V,I =180A DS D R ... See More ⇒

 7.1. Size:617K  ncepower
 nce60h10k.pdf pdf_icon

NCE60H18

http //www.ncepower.com NCE60H10K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10K uses advanced trench technology and design to provide excellent R with low gate charge. This DS(ON) device is suitable for use in PWM, load switching and general purpose applications. General Features V =60V,I =100A Schematic diagram DS D R ... See More ⇒

 7.2. Size:351K  ncepower
 nce60h15a.pdf pdf_icon

NCE60H18

http //www.ncepower.com NCE60H15A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON) ... See More ⇒

 7.3. Size:340K  ncepower
 nce60h15ad.pdf pdf_icon

NCE60H18

http //www.ncepower.com NCE60H15AD NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON) ... See More ⇒

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Detailed specifications: NCE6080AT, NCE6080ED, NCE6080EK, NCE60H10, NCE60H10D, NCE60H10K, NCE60H15AT, NCE60H15T, AON7403, NCE60H28LL, NCE60H30T, NCE60N1K0D, NCE60N1K0F, NCE60N1K0I, NCE60N1K0K, NCE60N1K0R, NCE60N2K1D

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs