NCE60N1K0I Specs and Replacement

Type Designator: NCE60N1K0I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 47 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 1.82 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-251

NCE60N1K0I substitution

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NCE60N1K0I datasheet

 ..1. Size:771K  ncepower
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NCE60N1K0I

NCE60N1K0I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 880 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.5 nC power conversion, and indu... See More ⇒

 5.1. Size:749K  ncepower
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NCE60N1K0I

NCE60N1K0D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 880 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.5 nC power conversion, and indu... See More ⇒

 5.2. Size:757K  ncepower
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NCE60N1K0I

NCE60N1K0R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 880 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.5 nC power conversion, and indu... See More ⇒

 5.3. Size:752K  ncepower
nce60n1k0k.pdf pdf_icon

NCE60N1K0I

NCE60N1K0K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 880 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.5 nC power conversion, and indu... See More ⇒

Detailed specifications: NCE60H10K, NCE60H15AT, NCE60H15T, NCE60H18, NCE60H28LL, NCE60H30T, NCE60N1K0D, NCE60N1K0F, AOD4184A, NCE60N1K0K, NCE60N1K0R, NCE60N2K1D, NCE60N2K1F, NCE60N2K1I, NCE60N2K1K, NCE60N2K1R, NCE60N370K

Keywords - NCE60N1K0I MOSFET specs

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