NCE60N2K1R MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE60N2K1R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 4.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.8 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 3.9 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 17.3 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
Package: SOT223
NCE60N2K1R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE60N2K1R Datasheet (PDF)
nce60n2k1r.pdf
NCE60N2K1RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P
nce60n2k1f.pdf
NCE60N2K1FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P
nce60n2k1d.pdf
NCE60N2K1DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P
nce60n2k1k.pdf
NCE60N2K1KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P
nce60n2k1i.pdf
NCE60N2K1IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
