All MOSFET. NCE60N2K1R Datasheet

 

NCE60N2K1R Datasheet and Replacement


   Type Designator: NCE60N2K1R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 4.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 1.8 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 17.3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
   Package: SOT223
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NCE60N2K1R Datasheet (PDF)

 ..1. Size:755K  ncepower
 nce60n2k1r.pdf pdf_icon

NCE60N2K1R

NCE60N2K1RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P

 5.1. Size:737K  ncepower
 nce60n2k1f.pdf pdf_icon

NCE60N2K1R

NCE60N2K1FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P

 5.2. Size:713K  ncepower
 nce60n2k1d.pdf pdf_icon

NCE60N2K1R

NCE60N2K1DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P

 5.3. Size:717K  ncepower
 nce60n2k1k.pdf pdf_icon

NCE60N2K1R

NCE60N2K1KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BUK9M53-60E | RW1C020UN | IRF441 | AP9926GEO | STD4N62K3 | IPB60R520CP | GSM3050S

Keywords - NCE60N2K1R MOSFET datasheet

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