NCE60N2K1R Specs and Replacement

Type Designator: NCE60N2K1R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 17.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm

Package: SOT223

NCE60N2K1R substitution

- MOSFET ⓘ Cross-Reference Search

 

NCE60N2K1R datasheet

 ..1. Size:755K  ncepower
 nce60n2k1r.pdf pdf_icon

NCE60N2K1R

NCE60N2K1R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 1950 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 1.8 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 3.9 nC SMPS requirements for P... See More ⇒

 5.1. Size:737K  ncepower
 nce60n2k1f.pdf pdf_icon

NCE60N2K1R

NCE60N2K1F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 1950 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 1.8 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 3.9 nC SMPS requirements for P... See More ⇒

 5.2. Size:713K  ncepower
 nce60n2k1d.pdf pdf_icon

NCE60N2K1R

NCE60N2K1D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 1950 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 1.8 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 3.9 nC SMPS requirements for P... See More ⇒

 5.3. Size:717K  ncepower
 nce60n2k1k.pdf pdf_icon

NCE60N2K1R

NCE60N2K1K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 1950 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 1.8 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 3.9 nC SMPS requirements for P... See More ⇒

SHOW MORE

Detailed specifications: NCE60N1K0F, NCE60N1K0I, NCE60N1K0K, NCE60N1K0R, NCE60N2K1D, NCE60N2K1F, NCE60N2K1I, NCE60N2K1K, IRF3205, NCE60N370K, NCE60N390, NCE60N390D, NCE60N390F, NCE60N390I, NCE60N390K, NCE60N640, NCE60N640D

Keywords - NCE60N2K1R MOSFET specs

 NCE60N2K1R cross reference

 NCE60N2K1R equivalent finder

 NCE60N2K1R pdf lookup

 NCE60N2K1R substitution

 NCE60N2K1R replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs