All MOSFET. NCE60N640F Datasheet

 

NCE60N640F Datasheet and Replacement


   Type Designator: NCE60N640F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.64 Ohm
   Package: TO-220F
 

 NCE60N640F substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCE60N640F Datasheet (PDF)

 ..1. Size:814K  ncepower
 nce60n640f.pdf pdf_icon

NCE60N640F

NCE60N640FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus

 5.1. Size:793K  ncepower
 nce60n640k.pdf pdf_icon

NCE60N640F

NCE60N640KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus

 5.2. Size:808K  ncepower
 nce60n640i.pdf pdf_icon

NCE60N640F

NCE60N640IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus

 5.3. Size:782K  ncepower
 nce60n640d.pdf pdf_icon

NCE60N640F

NCE60N640DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus

SHOW MORE

Datasheet: NCE60N370K , NCE60N390 , NCE60N390D , NCE60N390F , NCE60N390I , NCE60N390K , NCE60N640 , NCE60N640D , IRFP460 , NCE60N640I , NCE60N640K , NCE60N670F , NCE60N670K , NCE60N700D , NCE60N700F , NCE60N700I , NCE60N700K .

History: STW46NF30 | AM50N08-14D | HUF75343S3ST | MTN2572F3 | ZVN4206ASTOA

Keywords - NCE60N640F MOSFET datasheet

 NCE60N640F cross reference
 NCE60N640F equivalent finder
 NCE60N640F lookup
 NCE60N640F substitution
 NCE60N640F replacement

 

 
Back to Top

 


 
.