NCE60N640I MOSFET. Datasheet pdf. Equivalent

   Type Designator: NCE60N640I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6.7 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.64 Ohm
   Package: TO-251

NCE60N640I Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS