NCE60N700I Specs and Replacement

Type Designator: NCE60N700I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.1 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 21 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: TO251

NCE60N700I substitution

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NCE60N700I datasheet

 ..1. Size:667K  ncepower
 nce60n700i.pdf pdf_icon

NCE60N700I

NCE60N700I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 650 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.6 nC power conversion, and industr... See More ⇒

 5.1. Size:641K  ncepower
 nce60n700d.pdf pdf_icon

NCE60N700I

NCE60N700D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 650 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.6 nC power conversion, and industr... See More ⇒

 5.2. Size:686K  ncepower
 nce60n700f.pdf pdf_icon

NCE60N700I

NCE60N700F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 650 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.6 nC power conversion, and industr... See More ⇒

 5.3. Size:698K  ncepower
 nce60n700r.pdf pdf_icon

NCE60N700I

NCE60N700R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 650 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.6 nC power conversion, and industr... See More ⇒

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Detailed specifications: NCE60N640D, NCE60N640F, NCE60N640I, NCE60N640K, NCE60N670F, NCE60N670K, NCE60N700D, NCE60N700F, IRFB4227, NCE60N700K, NCE60N700R, NCE60ND03N, NCE60ND03S, NCE60ND08S, NCE60ND45AG, NCE60ND45XG, NCE60NF019T

Keywords - NCE60N700I MOSFET specs

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