All MOSFET. NCE60N700K Datasheet

 

NCE60N700K MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE60N700K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6.1 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 9.6 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO-252

 NCE60N700K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE60N700K Datasheet (PDF)

 ..1. Size:652K  ncepower
nce60n700k.pdf

NCE60N700K NCE60N700K

NCE60N700KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 650 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr

 5.1. Size:641K  ncepower
nce60n700d.pdf

NCE60N700K NCE60N700K

NCE60N700DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 650 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr

 5.2. Size:686K  ncepower
nce60n700f.pdf

NCE60N700K NCE60N700K

NCE60N700FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 650 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr

 5.3. Size:698K  ncepower
nce60n700r.pdf

NCE60N700K NCE60N700K

NCE60N700RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 650 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr

 5.4. Size:667K  ncepower
nce60n700i.pdf

NCE60N700K NCE60N700K

NCE60N700IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 650 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRFE210

 

 
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