All MOSFET. NCE60N700R Datasheet

 

NCE60N700R Datasheet and Replacement


   Type Designator: NCE60N700R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: SOT223
 

 NCE60N700R substitution

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NCE60N700R Datasheet (PDF)

 ..1. Size:698K  ncepower
 nce60n700r.pdf pdf_icon

NCE60N700R

NCE60N700RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 650 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr

 5.1. Size:641K  ncepower
 nce60n700d.pdf pdf_icon

NCE60N700R

NCE60N700DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 650 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr

 5.2. Size:686K  ncepower
 nce60n700f.pdf pdf_icon

NCE60N700R

NCE60N700FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 650 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr

 5.3. Size:667K  ncepower
 nce60n700i.pdf pdf_icon

NCE60N700R

NCE60N700IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 650 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr

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Datasheet: NCE60N640I , NCE60N640K , NCE60N670F , NCE60N670K , NCE60N700D , NCE60N700F , NCE60N700I , NCE60N700K , IRFB4227 , NCE60ND03N , NCE60ND03S , NCE60ND08S , NCE60ND45AG , NCE60ND45XG , NCE60NF019T , NCE60NF031T , NCE60NF040T .

History: IPB80N06S2L-11 | SI8410DB | AP30T10GK

Keywords - NCE60N700R MOSFET datasheet

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