All MOSFET. NCE60NF031T Datasheet

 

NCE60NF031T Datasheet and Replacement


   Type Designator: NCE60NF031T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 490 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 81 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 249 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: TO-247
 

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NCE60NF031T Datasheet (PDF)

 ..1. Size:900K  ncepower
 nce60nf031t.pdf pdf_icon

NCE60NF031T

NCE60NF031TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSmin@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 23 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 81 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 135 nCSMPS requirements for P

 6.1. Size:929K  ncepower
 nce60nf040t.pdf pdf_icon

NCE60NF031T

NCE60NF040TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 35 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 61 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 87 nCSMPS requirements for PFC,

 6.2. Size:789K  ncepower
 nce60nf080f.pdf pdf_icon

NCE60NF031T

NCE60NF080FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industria

 6.3. Size:763K  ncepower
 nce60nf080.pdf pdf_icon

NCE60NF031T

NCE60NF080N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industrial

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Datasheet: NCE60N700K , NCE60N700R , NCE60ND03N , NCE60ND03S , NCE60ND08S , NCE60ND45AG , NCE60ND45XG , NCE60NF019T , AON7408 , NCE60NF040T , NCE60NF055 , NCE60NF055D , NCE60NF055F , NCE60NF055T , NCE60NF080 , NCE60NF080D , NCE60NF080F .

History: AP62T03GH | AO4706 | R5009ANJ | 30P06 | AOY66620 | MTN138KS3 | AP9566GM-HF

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