NCE60NF031T Specs and Replacement

Type Designator: NCE60NF031T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 490 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 81 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 249 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm

Package: TO-247

NCE60NF031T substitution

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NCE60NF031T datasheet

 ..1. Size:900K  ncepower
 nce60nf031t.pdf pdf_icon

NCE60NF031T

NCE60NF031T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 23 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 81 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 135 nC SMPS requirements for P... See More ⇒

 6.1. Size:929K  ncepower
 nce60nf040t.pdf pdf_icon

NCE60NF031T

NCE60NF040T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 35 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 61 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 87 nC SMPS requirements for PFC,... See More ⇒

 6.2. Size:789K  ncepower
 nce60nf080f.pdf pdf_icon

NCE60NF031T

NCE60NF080F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 70 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 41 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 53 nC power conversion, and industria... See More ⇒

 6.3. Size:763K  ncepower
 nce60nf080.pdf pdf_icon

NCE60NF031T

NCE60NF080 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 70 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 41 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 53 nC power conversion, and industrial... See More ⇒

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Detailed specifications: NCE60N700K, NCE60N700R, NCE60ND03N, NCE60ND03S, NCE60ND08S, NCE60ND45AG, NCE60ND45XG, NCE60NF019T, IRFP250N, NCE60NF040T, NCE60NF055, NCE60NF055D, NCE60NF055F, NCE60NF055T, NCE60NF080, NCE60NF080D, NCE60NF080F

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