All MOSFET. NCE60NF055 Datasheet

 

NCE60NF055 Datasheet and Replacement


   Type Designator: NCE60NF055
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 378 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 51 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 58 nC
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO-220
 

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NCE60NF055 Datasheet (PDF)

 ..1. Size:747K  ncepower
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NCE60NF055

NCE60NF055N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 50 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 51 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 58 nCpower conversion, and industrial

 0.1. Size:872K  ncepower
 nce60nf055t.pdf pdf_icon

NCE60NF055

NCE60NF055TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 50 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 51 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 58 nCpower conversion, and industria

 0.2. Size:728K  ncepower
 nce60nf055d.pdf pdf_icon

NCE60NF055

NCE60NF055DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 50 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 51 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 58 nCpower conversion, and industria

 0.3. Size:807K  ncepower
 nce60nf055f.pdf pdf_icon

NCE60NF055

NCE60NF055FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 50 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 51 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 58 nCpower conversion, and industria

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History: FDS6299S | WMK220N20HG3

Keywords - NCE60NF055 MOSFET datasheet

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