All MOSFET. NCE60NF080 Datasheet

 

NCE60NF080 Datasheet and Replacement


   Type Designator: NCE60NF080
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 351 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 41 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 53 nC
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 123 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO-220
 

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NCE60NF080 Datasheet (PDF)

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NCE60NF080

NCE60NF080N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industrial

 0.1. Size:789K  ncepower
 nce60nf080f.pdf pdf_icon

NCE60NF080

NCE60NF080FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industria

 0.2. Size:887K  ncepower
 nce60nf080t.pdf pdf_icon

NCE60NF080

NCE60NF080TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industria

 0.3. Size:749K  ncepower
 nce60nf080d.pdf pdf_icon

NCE60NF080

NCE60NF080DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industria

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History: DMP3015LSS

Keywords - NCE60NF080 MOSFET datasheet

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