All MOSFET. NCE60NF110F Datasheet

 

NCE60NF110F Datasheet and Replacement


   Type Designator: NCE60NF110F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 29 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO-220F
 

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NCE60NF110F Datasheet (PDF)

 ..1. Size:571K  ncepower
 nce60nf110f.pdf pdf_icon

NCE60NF110F

NCE60NF110FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 95 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 29 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC, AC

 4.1. Size:568K  ncepower
 nce60nf110.pdf pdf_icon

NCE60NF110F

NCE60NF110N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 95 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 29 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC, AC/

 6.1. Size:703K  ncepower
 nce60nf160v.pdf pdf_icon

NCE60NF110F

NCE60NF160VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 145 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 21 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 23 nCpower conversion, and industri

 6.2. Size:658K  ncepower
 nce60nf160k.pdf pdf_icon

NCE60NF110F

NCE60NF160KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 145 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 21 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 23 nCpower conversion, and industri

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Datasheet: NCE60NF055D , NCE60NF055F , NCE60NF055T , NCE60NF080 , NCE60NF080D , NCE60NF080F , NCE60NF080T , NCE60NF110 , SPP20N60C3 , NCE60NF160K , NCE60NF160T , NCE60NF160V , NCE60NF200 , NCE60NF200D , NCE60NF200F , NCE60NF200I , NCE60NF200K .

History: AP86T03GJ | 2SK4199LS | PMCXB1000UE | UTT6NP10G-S08-R | SIA537EDJ | AON6224A | QM2N7002E3K1

Keywords - NCE60NF110F MOSFET datasheet

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