FQA70N15 Specs and Replacement
Type Designator: FQA70N15
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 330 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TO3PN
FQA70N15 substitution
- MOSFET ⓘ Cross-Reference Search
FQA70N15 datasheet
fqa70n15.pdf
April 2000 TM QFET QFET QFET QFET N-ChanneI Power MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 70A, 150 V, RDS(on) = 0.028 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 135 nC) planar stripe, DMOS technology. Low Crss ( typical 135 nC) This advanced technology has... See More ⇒
fqa70n15.pdf
isc N-Channel MOSFET Transistor FQA70N15 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 28m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
fqa70n10.pdf
August 2000 TM QFET QFET QFET QFET FQA70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 70A, 100V, RDS(on) = 0.023 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 150 pF) This advanced technology has been... See More ⇒
Detailed specifications: FQA46N15, FQA55N25, FQA62N25C, FQA65N20, SDF05N40T, FQA6N90CF109, FQA70N10, SDF04N65, 2N60, FQA7N80CF109, SDF04N60, FQA8N100C, FQA8N90CF109, FQA90N08, FQA90N15, FQA90N15F109, FQA9N90F109
Keywords - FQA70N15 MOSFET specs
FQA70N15 cross reference
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History: PTP88N07
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