FQA70N15 Datasheet and Replacement
Type Designator: FQA70N15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 330 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TO3PN
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FQA70N15 Datasheet (PDF)
fqa70n15.pdf

April 2000TMQFETQFETQFETQFET N-ChanneI Power MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 70A, 150 V, RDS(on) = 0.028 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 135 nC)planar stripe, DMOS technology. Low Crss ( typical 135 nC)This advanced technology has
fqa70n15.pdf

isc N-Channel MOSFET Transistor FQA70N15FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
fqa70n10.pdf

August 2000TMQFETQFETQFETQFETFQA70N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 70A, 100V, RDS(on) = 0.023 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 150 pF)This advanced technology has been
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: HAT2026R | SM4186T9RL | APT10021JFLL | NCE30P12BS | SSW65R190S2 | NP180N04TUJ | SRT10N160LD
Keywords - FQA70N15 MOSFET datasheet
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History: HAT2026R | SM4186T9RL | APT10021JFLL | NCE30P12BS | SSW65R190S2 | NP180N04TUJ | SRT10N160LD



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