All MOSFET. NCE60NF200F Datasheet

 

NCE60NF200F Datasheet and Replacement


   Type Designator: NCE60NF200F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO-220F
 

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NCE60NF200F Datasheet (PDF)

 ..1. Size:697K  ncepower
 nce60nf200f.pdf pdf_icon

NCE60NF200F

NCE60NF200FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust

 4.1. Size:679K  ncepower
 nce60nf200i.pdf pdf_icon

NCE60NF200F

NCE60NF200IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust

 4.2. Size:686K  ncepower
 nce60nf200k.pdf pdf_icon

NCE60NF200F

NCE60NF200KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust

 4.3. Size:716K  ncepower
 nce60nf200d.pdf pdf_icon

NCE60NF200F

NCE60NF200DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust

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Datasheet: NCE60NF080T , NCE60NF110 , NCE60NF110F , NCE60NF160K , NCE60NF160T , NCE60NF160V , NCE60NF200 , NCE60NF200D , TK10A60D , NCE60NF200I , NCE60NF200K , NCE60NF260 , NCE60NF260D , NCE60NF260F , NCE60NF260I , NCE60NF260K , NCE60NF730D .

History: IRHYS67134CM | CEP16N10L

Keywords - NCE60NF200F MOSFET datasheet

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