NCE60NF200K MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE60NF200K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 22.8 nC
trⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO-252
NCE60NF200K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE60NF200K Datasheet (PDF)
nce60nf200k.pdf
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NCE60NF200KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust
nce60nf200i.pdf
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NCE60NF200IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust
nce60nf200f.pdf
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NCE60NF200FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust
nce60nf200d.pdf
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NCE60NF200DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust
nce60nf200.pdf
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NCE60NF200N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and industr
nce60nf200t.pdf
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NCE60NF200TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22.8 nCpower conversion, and indust
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .