FQA7N80CF109 Specs and Replacement
Type Designator: FQA7N80CF109
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 198 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: TO3PN
FQA7N80CF109 substitution
- MOSFET ⓘ Cross-Reference Search
FQA7N80CF109 datasheet
fqa7n80c.pdf
TM QFET FQA7N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to Fast... See More ⇒
fqa7n80c f109.pdf
September 2007 QFET FQA7N80C_F109 800V N-Channel MOSFET Features Description 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 27nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 10pF) This advanced technology has been especially tailored ... See More ⇒
fqa7n80c-f109.pdf
FQA7N80C-F109 N-Channel QFET MOSFET Description 800 V, 7 A, 1.9 This N-Channel enhancement mode power MOSFET is Features produced using ON Semiconductor s proprietary planar 7.0 A, 800 V, RDS(on) = 1.9 (Max.) @ VGS = 10 V, ID = 3.5 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 27nC) technology has been especially tailored to reduce o... See More ⇒
Detailed specifications: FQA55N25, FQA62N25C, FQA65N20, SDF05N40T, FQA6N90CF109, FQA70N10, SDF04N65, FQA70N15, 8N60, SDF04N60, FQA8N100C, FQA8N90CF109, FQA90N08, FQA90N15, FQA90N15F109, FQA9N90F109, FQA9N90CF109
Keywords - FQA7N80CF109 MOSFET specs
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