FQA7N80CF109 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQA7N80CF109
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 198 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 27 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: TO3PN
FQA7N80CF109 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQA7N80CF109 Datasheet (PDF)
fqa7n80c.pdf
TMQFETFQA7N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to Fast
fqa7n80c f109.pdf
September 2007 QFETFQA7N80C_F109800V N-Channel MOSFETFeatures Description 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 27nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 10pF)This advanced technology has been especially tailored
fqa7n80c-f109.pdf
FQA7N80C-F109 N-Channel QFET MOSFETDescription800 V, 7 A, 1.9 This N-Channel enhancement mode power MOSFET is Featuresproduced using ON Semiconductors proprietary planar 7.0 A, 800 V, RDS(on) = 1.9 (Max.) @ VGS = 10 V, ID = 3.5 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 27nC)technology has been especially tailored to reduce o
Datasheet: FQA55N25 , FQA62N25C , FQA65N20 , SDF05N40T , FQA6N90CF109 , FQA70N10 , SDF04N65 , FQA70N15 , IRFP250 , SDF04N60 , FQA8N100C , FQA8N90CF109 , FQA90N08 , FQA90N15 , FQA90N15F109 , FQA9N90F109 , FQA9N90CF109 .
