NCE60P04SN Specs and Replacement
Type Designator: NCE60P04SN
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ -
Output Capacitance: 85 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: SOT-23-6L
- MOSFET ⓘ Cross-Reference Search
NCE60P04SN datasheet
..1. Size:358K ncepower
nce60p04sn.pdf 
NCE60P04SN http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04SN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-4A RDS(ON) ... See More ⇒
6.1. Size:344K ncepower
nce60p04y.pdf
Pb Free Product http //www.ncepower.com NCE60P04Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-4A RDS(ON) ... See More ⇒
6.2. Size:333K ncepower
nce60p04r.pdf
Pb Free Product http //www.ncepower.com NCE60P04R NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-4.3A Schematic diagram RDS(ON) ... See More ⇒
7.2. Size:411K ncepower
nce60p05n.pdf
http //www.ncepower.com NCE60P05N NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-5A RDS(ON) ... See More ⇒
7.3. Size:364K ncepower
nce60p06s.pdf
http //www.ncepower.com NCE60P06S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-6A RDS(ON) ... See More ⇒
7.4. Size:285K ncepower
nce60p09s.pdf
NCE60P09S http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-9A RDS(ON) ... See More ⇒
7.7. Size:656K ncepower
nce60p03r.pdf
http //www.ncepower.com NCE60P03R NCE P-Channel Enhancement Mode Power MOSFET Description General Features The NCE60P03R uses advanced trench technology and design V =-60V,I =-3A DS D to provide excellent R with low gate charge .This device is DS(ON) R ... See More ⇒
7.8. Size:288K ncepower
nce60p09as.pdf
NCE60P09AS http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-9A RDS(ON) ... See More ⇒
7.9. Size:492K ncepower
nce60p05r.pdf
http //www.ncepower.com NCE60P05R NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-5A Schematic diagram RDS(ON) ... See More ⇒
7.10. Size:371K ncepower
nce60p07as.pdf
NCE60P07AS http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P07AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-7A Schematic diagram RDS(ON) ... See More ⇒
7.11. Size:655K ncepower
nce60p09k.pdf
http //www.ncepower.com NCE60P09K NCE P-Channel Enhancement Mode Power MOSFET General Features Description V =-60V,I =-9A DS D The NCE60P09K uses advanced trench technology and design R ... See More ⇒
7.12. Size:353K ncepower
nce60p03y.pdf
NCE60P03Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P03Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-3A RDS(ON) ... See More ⇒
Detailed specifications: NCE60NP09S, NCE60NP1515K, NCE60NP2012K, NCE60NP2016G, NCE60NP4035K, NCE60P02Y, NCE60P03R, NCE60P03Y, 5N60, NCE60P05BY, NCE60P05N, NCE60P05R, NCE60P07AS, NCE60P08AS, NCE60P09AS, NCE60P09K, NCE60P12AS
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
