NCE60P82AK Specs and Replacement
Type Designator: NCE60P82AK
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 82 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 356 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO-252
NCE60P82AK substitution
- MOSFET ⓘ Cross-Reference Search
NCE60P82AK datasheet
nce60p82ak.pdf
NCE60P82AK http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P82AK uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V =-60V,I =-82A DS D R ... See More ⇒
nce60p82ad.pdf
NCE60P82AD http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P82AD uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V =-60V,I =-82A DS D R ... See More ⇒
nce60p82af.pdf
NCE60P82AF http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET General Features V =-60V,I =-41A Description DS D The NCE60P82AF uses advanced trench technology and design R ... See More ⇒
Detailed specifications: NCE60P40F, NCE60P45AK, NCE60P50G, NCE60P65K, NCE60P70D, NCE60P70G, NCE60P82A, NCE60P82AD, IRLB3034, NCE60PD05S, NCE60T2K2I, NCE60T2K2K, NCE6525Q, NCE65N180, NCE65N180D, NCE65N180F, NCE65N180K
Keywords - NCE60P82AK MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 2SK416S | NCE60PD05S
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