NCE65N460K Specs and Replacement

Type Designator: NCE65N460K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm

Package: TO252

NCE65N460K substitution

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NCE65N460K datasheet

 ..1. Size:716K  ncepower
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NCE65N460K

NCE65N460K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 410 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12 nC power conversion, and industr... See More ⇒

 5.1. Size:724K  ncepower
nce65n460.pdf pdf_icon

NCE65N460K

NCE65N460 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 410 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12 nC power conversion, and industri... See More ⇒

 5.2. Size:711K  ncepower
nce65n460d.pdf pdf_icon

NCE65N460K

NCE65N460D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 410 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12 nC power conversion, and industr... See More ⇒

 5.3. Size:731K  ncepower
nce65n460i.pdf pdf_icon

NCE65N460K

NCE65N460I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 410 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12 nC power conversion, and industr... See More ⇒

Detailed specifications: NCE65N330F, NCE65N330I, NCE65N330K, NCE65N330R, NCE65N460, NCE65N460D, NCE65N460F, NCE65N460I, IRF630, NCE65N520, NCE65N520D, NCE65N520F, NCE65N520I, NCE65N520K, NCE65N760, NCE65N760D, NCE65N760F

Keywords - NCE65N460K MOSFET specs

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