All MOSFET. NCE65N760F Datasheet

 

NCE65N760F Datasheet and Replacement


   Type Designator: NCE65N760F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.76 Ohm
   Package: TO-220F
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NCE65N760F Datasheet (PDF)

 ..1. Size:730K  ncepower
 nce65n760f.pdf pdf_icon

NCE65N760F

NCE65N760FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 7.2 nCpower conversion, and industria

 5.1. Size:729K  ncepower
 nce65n760d.pdf pdf_icon

NCE65N760F

NCE65N760DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 7.2 nCpower conversion, and industria

 5.2. Size:735K  ncepower
 nce65n760k.pdf pdf_icon

NCE65N760F

NCE65N760KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 7.2 nCpower conversion, and industria

 5.3. Size:728K  ncepower
 nce65n760.pdf pdf_icon

NCE65N760F

NCE65N760N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 7.2 nCpower conversion, and industrial

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCEAP055N12D | AP9926GEO | RW1C020UN | IRF441 | GSM3050S | ISCD3NK80Z | STD4N62K3

Keywords - NCE65N760F MOSFET datasheet

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