All MOSFET. NCE65N800K Datasheet

 

NCE65N800K Datasheet and Replacement


   Type Designator: NCE65N800K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5.8 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 8.7 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO252
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NCE65N800K Datasheet (PDF)

 ..1. Size:786K  ncepower
 nce65n800k.pdf pdf_icon

NCE65N800K

NCE65N800KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 700 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.7 nCpower conversion, and indu

 5.1. Size:816K  ncepower
 nce65n800d.pdf pdf_icon

NCE65N800K

NCE65N800DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 700 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.7 nCpower conversion, and indu

 5.2. Size:817K  ncepower
 nce65n800r.pdf pdf_icon

NCE65N800K

NCE65N800RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 700 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.7 nCpower conversion, and indu

 5.3. Size:798K  ncepower
 nce65n800f.pdf pdf_icon

NCE65N800K

NCE65N800FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 700 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.7 nCpower conversion, and indu

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCE60NF160T | SIHFPC60 | 10N03 | STD4N62K3 | AP9926GEO | IRF7665S2TR1PBF | RW1C020UN

Keywords - NCE65N800K MOSFET datasheet

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