All MOSFET. NCE65NF068LL Datasheet

 

NCE65NF068LL Datasheet and Replacement


   Type Designator: NCE65NF068LL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 371 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 65 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: TOLL
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NCE65NF068LL Datasheet (PDF)

 ..1. Size:728K  ncepower
 nce65nf068ll.pdf pdf_icon

NCE65NF068LL

NCE65NF068LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industri

 4.1. Size:726K  ncepower
 nce65nf068t.pdf pdf_icon

NCE65NF068LL

NCE65NF068TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industria

 4.2. Size:775K  ncepower
 nce65nf068d.pdf pdf_icon

NCE65NF068LL

NCE65NF068DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industria

 4.3. Size:726K  ncepower
 nce65nf068v.pdf pdf_icon

NCE65NF068LL

NCE65NF068VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industria

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History: 20N03L-TO252 | 2N6762JTXV

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