NCE65NF099V Datasheet. Specs and Replacement

Type Designator: NCE65NF099V  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 346 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 96 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm

Package: DFN8X8

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NCE65NF099V datasheet

 ..1. Size:709K  ncepower
 nce65nf099v.pdf pdf_icon

NCE65NF099V

NCE65NF099V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC... See More ⇒

 4.1. Size:856K  ncepower
 nce65nf099t.pdf pdf_icon

NCE65NF099V

NCE65NF099T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC... See More ⇒

 4.2. Size:726K  ncepower
 nce65nf099ll.pdf pdf_icon

NCE65NF099V

NCE65NF099LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, A... See More ⇒

 4.3. Size:709K  ncepower
 nce65nf099d.pdf pdf_icon

NCE65NF099V

NCE65NF099D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC... See More ⇒

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Detailed specifications: NCE65NF068LL, NCE65NF068T, NCE65NF068V, NCE65NF099, NCE65NF099D, NCE65NF099F, NCE65NF099LL, NCE65NF099T, 18N50, NCE65NF190, NCE65NF190D, NCE65NF190F, NCE65NF190K, NCE65NF190LL, NCE65NF190T, NCE65NF190V, NCE65T130T

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