NCE70N1K1D PDF and Equivalents Search

 

NCE70N1K1D Specs and Replacement


   Type Designator: NCE70N1K1D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 58 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO263
 

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NCE70N1K1D datasheet

 ..1. Size:786K  ncepower
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NCE70N1K1D

NCE70N1K1D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind... See More ⇒

 5.1. Size:791K  ncepower
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NCE70N1K1D

NCE70N1K1K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind... See More ⇒

 5.2. Size:804K  ncepower
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NCE70N1K1D

NCE70N1K1F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind... See More ⇒

 5.3. Size:811K  ncepower
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NCE70N1K1D

NCE70N1K1I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind... See More ⇒

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Detailed specifications: NCE65T180V , NCE65T1K9I , NCE65T1K9K , NCE65TF078T , NCE6602N , NCE6890D , NCE70H10F , NCE70N100I , 7N60 , NCE70N1K1F , NCE70N1K1I , NCE70N1K1K , NCE70N1K1R , NCE70N1K4F , NCE70N1K4I , NCE70N1K4K , NCE70N1K4R .

Keywords - NCE70N1K1D MOSFET specs

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