All MOSFET. NCE70N900I Datasheet

 

NCE70N900I Datasheet and Replacement


   Type Designator: NCE70N900I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO-251
 

 NCE70N900I substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCE70N900I Datasheet (PDF)

 ..1. Size:826K  ncepower
 nce70n900i.pdf pdf_icon

NCE70N900I

NCE70N900IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 820 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and industr

 5.1. Size:813K  ncepower
 nce70n900f.pdf pdf_icon

NCE70N900I

NCE70N900FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 820 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.7 nCpower conversion, and indust

 5.2. Size:842K  ncepower
 nce70n900r.pdf pdf_icon

NCE70N900I

NCE70N900RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 820 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.7 nCpower conversion, and indust

 5.3. Size:800K  ncepower
 nce70n900k.pdf pdf_icon

NCE70N900I

NCE70N900KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 820 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.7 nCpower conversion, and indust

SHOW MORE

Datasheet: NCE70N380I , NCE70N380K , NCE70N380R , NCE70N600 , NCE70N600F , NCE70N600K , NCE70N900 , NCE70N900F , 50N06 , NCE70N900K , NCE70N900R , NCE70T1K2F , NCE70T260I , NCE70T260K , NCE70T260T , NCE70T540 , NCE70T540D .

History: CS5N65A3 | NVD4806N | TPCA8008-H | GSM6424

Keywords - NCE70N900I MOSFET datasheet

 NCE70N900I cross reference
 NCE70N900I equivalent finder
 NCE70N900I lookup
 NCE70N900I substitution
 NCE70N900I replacement

 

 
Back to Top

 


 
.