NCE70T1K2F Specs and Replacement

Type Designator: NCE70T1K2F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 17 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO-220F

NCE70T1K2F substitution

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NCE70T1K2F datasheet

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NCE70T1K2F

NCE70T1K2,NCE70T1K2D,NCE70T1K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, an... See More ⇒

 5.1. Size:476K  ncepower
 nce70t1k2i nce70t1k2k.pdf pdf_icon

NCE70T1K2F

NCE70T1K2K,NCE70T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri... See More ⇒

 5.2. Size:476K  ncepower
 nce70t1k2i.pdf pdf_icon

NCE70T1K2F

NCE70T1K2K,NCE70T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri... See More ⇒

 5.3. Size:476K  ncepower
 nce70t1k2k nce70t1k2i.pdf pdf_icon

NCE70T1K2F

NCE70T1K2K,NCE70T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 1100 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri... See More ⇒

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Detailed specifications: NCE70N600, NCE70N600F, NCE70N600K, NCE70N900, NCE70N900F, NCE70N900I, NCE70N900K, NCE70N900R, IRF640, NCE70T260I, NCE70T260K, NCE70T260T, NCE70T540, NCE70T540D, NCE70T540F, NCE70T680I, NCE70T680K

Keywords - NCE70T1K2F MOSFET specs

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