All MOSFET. FQB19N20C Datasheet

 

FQB19N20C MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQB19N20C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40.5 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO263 D2PAK

 FQB19N20C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQB19N20C Datasheet (PDF)

Datasheet: FQAF11N90C , FQAF13N80 , SDD06N70 , FQAF16N50 , FQB11P06 , FQB12P20 , FQB19N20 , SDD05N70 , IRF1405 , SDD05N04 , FQB19N20L , SDD04N65 , FQB1P50 , FQB22P10 , FQB22P10TMF085 , FQB25N33TMF085 , FQB27P06 .

 

 
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