FQB19N20C Specs and Replacement
Type Designator: FQB19N20C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 139 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
FQB19N20C substitution
- MOSFET ⓘ Cross-Reference Search
FQB19N20C datasheet
fqb19n20ctm fqb19n20c fqi19n20c fqi19n20ctu.pdf
October 2008 QFET FQB19N20C/FQI19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19.0A, 200V, RDS(on) = 0.17 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40.5 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been espec... See More ⇒
fqb19n20c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fqb19n20tm fqb19n20 fqi19n20 fqi19n20tu.pdf
October 2008 QFET FQB19N20 / FQI19N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 19.4A, 200V, RDS(on) = 0.15 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been espec... See More ⇒
fqb19n20ltm fqb19n20l fqi19n20l.pdf
October 2008 QFET FQB19N20L / FQI19N20L 200V LOGIC N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 21A, 200V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been ... See More ⇒
Detailed specifications: FQAF11N90C, FQAF13N80, SDD06N70, FQAF16N50, FQB11P06, FQB12P20, FQB19N20, SDD05N70, MMIS60R580P, SDD05N04, FQB19N20L, SDD04N65, FQB1P50, FQB22P10, FQB22P10TMF085, FQB25N33TMF085, FQB27P06
Keywords - FQB19N20C MOSFET specs
FQB19N20C cross reference
FQB19N20C equivalent finder
FQB19N20C pdf lookup
FQB19N20C substitution
FQB19N20C replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: BRCS700P10DP | BTS282Z
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