All MOSFET. NCE85H21TC Datasheet

 

NCE85H21TC Datasheet and Replacement


   Type Designator: NCE85H21TC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 210 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 140 nC
   tr ⓘ - Rise Time: 124 nS
   Cossⓘ - Output Capacitance: 720 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm
   Package: TO-247
 

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NCE85H21TC Datasheet (PDF)

 ..1. Size:285K  ncepower
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NCE85H21TC

Pb Free Producthttp://www.ncepower.com NCE85H21TCNCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Schematic diagram RDS(ON)

 6.1. Size:305K  ncepower
 nce85h21.pdf pdf_icon

NCE85H21TC

Pb Free Producthttp://www.ncepower.com NCE85H21NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210ANote5 Schematic diagram RDS(ON)

 6.2. Size:322K  ncepower
 nce85h21c.pdf pdf_icon

NCE85H21TC

Pb Free Producthttp://www.ncepower.com NCE85H21CNCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Schematic diagram RDS(ON)

 7.1. Size:382K  ncepower
 nce85h25t.pdf pdf_icon

NCE85H21TC

http://www.ncepower.com NCE85H25TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H25T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 85V,ID =250A RDS(ON)

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Datasheet: NCE8290 , NCE8290B , NCE8295AG , NCE8295AI , NCE82H140 , NCE82H140LL , NCE82H160 , NCE82H160D , 5N60 , NCE85H25 , NCE85H25T , NCE8736 , NCE9435A , NCEA0130AG , NCEA01P13K , NCEA02P20K , NCEA15P30K .

History: DMN2990UDJ | CEP830G | IPB180N04S4-01

Keywords - NCE85H21TC MOSFET datasheet

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