NCEA0130AG Datasheet and Replacement
Type Designator: NCEA0130AG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 36 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 96 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: DFN5X6-8L
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NCEA0130AG Datasheet (PDF)
ncea0130ag.pdf

http://www.ncepower.comNCEA0130AGNCE Automotive N-Channel Enhancement Mode Power MOSFET (Primary)General Features V = 100V,I =36ADescription DS DThe NCEA0130AG uses advanced trench technology and R
ncea01p13k.pdf

NCEA01P13Khttp://www.ncepower.comNCE Automotive P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA01P13K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications. It is ESD protested.General FeaturesSchematic diagram V =-100V,I =-13ADS DR
ncea02p20k.pdf

http://www.ncepower.comNCEA02P20KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA02P20K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General FeaturesSchematic diagram V =-200V,I =-20ADS DR
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: LSF65R570GT | CSD16342Q5A
Keywords - NCEA0130AG MOSFET datasheet
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History: LSF65R570GT | CSD16342Q5A



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