All MOSFET. NCEA0130AG Datasheet

 

NCEA0130AG MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCEA0130AG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 67.2 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 96 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: DFN5X6-8L

 NCEA0130AG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCEA0130AG Datasheet (PDF)

 ..1. Size:759K  ncepower
 ncea0130ag.pdf

NCEA0130AG NCEA0130AG

http://www.ncepower.comNCEA0130AGNCE Automotive N-Channel Enhancement Mode Power MOSFET (Primary)General Features V = 100V,I =36ADescription DS DThe NCEA0130AG uses advanced trench technology and R

 8.1. Size:962K  ncepower
 ncea01p13k.pdf

NCEA0130AG NCEA0130AG

NCEA01P13Khttp://www.ncepower.comNCE Automotive P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA01P13K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications. It is ESD protested.General FeaturesSchematic diagram V =-100V,I =-13ADS DR

 9.1. Size:742K  ncepower
 ncea02p20k.pdf

NCEA0130AG NCEA0130AG

http://www.ncepower.comNCEA02P20KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA02P20K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General FeaturesSchematic diagram V =-200V,I =-20ADS DR

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SSF2N60D2 | TK16A55D | NP36P06KDG

 

 
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