NCEAP0135AK Specs and Replacement

Type Designator: NCEAP0135AK

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 139 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: TO252

NCEAP0135AK substitution

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NCEAP0135AK datasheet

 ..1. Size:660K  ncepower
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NCEAP0135AK

http //www.ncepower.com NCEAP0135AK NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP0135AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . DS(ON) g This device is ideal for high-frequ... See More ⇒

 7.1. Size:548K  ncepower
nceap0178ak.pdf pdf_icon

NCEAP0135AK

http //www.ncepower.com NCEAP0178AK NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP0178AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency switc... See More ⇒

 7.2. Size:704K  ncepower
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NCEAP0135AK

http //www.ncepower.com NCEAP01P35AK NCE Automotive P-Channel Super Trench Power MOSFET Description The NCEAP01P35AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency sw... See More ⇒

 7.3. Size:692K  ncepower
nceap016n60vd.pdf pdf_icon

NCEAP0135AK

http //www.ncepower.com NCEAP016N60VD NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP016N60VD uses Super Trench II technology that is V =60V,I =315A(Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.1m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power ... See More ⇒

Detailed specifications: NCEA6058K, NCEA6080K, NCEA60ND08S, NCEA60ND18G, NCEA60P82AK, NCEA65NF036T, NCEA65NF036T4, NCEA85H25, AO4407, NCEAP016N10LL, NCEAP016N60VD, NCEAP016N85LL, NCEAP0178AK, NCEAP018N60AGU, NCEAP018N60GU, NCEAP018N85LL, NCEAP01ND35AG

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs