NCEAP016N10LL PDF and Equivalents Search

http //www.ncepower.com NCEAP016N10LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =385A DS D uniquely optimized to provide the most efficient high frequency R =1.2m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate ... See More ⇒

http //www.ncepower.com NCEAP016N60VD NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP016N60VD uses Super Trench II technology that is V =60V,I =315A(Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.1m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power ... See More ⇒

NCEAP016N85LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =385A DS D uniquely optimized to provide the most efficient high frequency R =1.2m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses Excel... See More ⇒

http //www.ncepower.com NCEAP0178AK NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP0178AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency switc... See More ⇒

http //www.ncepower.com NCEAP01P35AK NCE Automotive P-Channel Super Trench Power MOSFET Description The NCEAP01P35AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency sw... See More ⇒

http //www.ncepower.com NCEAP0135AK NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP0135AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . DS(ON) g This device is ideal for high-frequ... See More ⇒

http //www.ncepower.com NCEAP018N85LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP018N85LL uses Super Trench II technology that is V =85V,I =330A DS D uniquely optimized to provide the most efficient high frequency R =1.3m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate c... See More ⇒

NCEAP018N60GU http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP018N60GU uses Super Trench II technology that is V =60V,I =256A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.6 m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power E... See More ⇒

NCEAP018N60AGU http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET General Features Description V =60V,I =270A (Silicon Limited) DS D The NCEAP018N60AGU uses Super Trench II technology that is R =1.4 m (typical) @ V =10V DS(ON) GS uniquely optimized to provide the most efficient high frequency R =1.8 m (typical) @ V =4.5V DS(ON) GS switching perfor... See More ⇒

http //www.ncepower.com NCEAP01ND35AG NCE N-Channel Super Trench Power MOSFET Description General Features The NCEAP01ND35AG uses Super Trench technology that is V =100V,I =35A DS D uniquely optimized to provide the most efficient high frequency R =24m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =27m (typical) @ V =4.5V DS(ON) GS lo... See More ⇒