All MOSFET. NCEAP01ND35AG Datasheet

 

NCEAP01ND35AG MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCEAP01ND35AG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 26 nC
   trⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 139 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: DFN5X6-8L

 NCEAP01ND35AG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCEAP01ND35AG Datasheet (PDF)

 ..1. Size:583K  ncepower
 nceap01nd35ag.pdf

NCEAP01ND35AG NCEAP01ND35AG

http://www.ncepower.com NCEAP01ND35AGNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP01ND35AG uses Super Trench technology that is V =100V,I =35ADS Duniquely optimized to provide the most efficient high frequency R =24m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =27m (typical) @ V =4.5VDS(ON) GSlo

 7.1. Size:548K  ncepower
 nceap0178ak.pdf

NCEAP01ND35AG NCEAP01ND35AG

http://www.ncepower.com NCEAP0178AKNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP0178AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequency switc

 7.2. Size:704K  ncepower
 nceap01p35ak.pdf

NCEAP01ND35AG NCEAP01ND35AG

http://www.ncepower.comNCEAP01P35AKNCE Automotive P-Channel Super Trench Power MOSFETDescriptionThe NCEAP01P35AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequency sw

 7.3. Size:692K  ncepower
 nceap016n60vd.pdf

NCEAP01ND35AG NCEAP01ND35AG

http://www.ncepower.comNCEAP016N60VDNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEAP016N60VD uses Super Trench II technology that is V =60V,I =315A(Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.1m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power

 7.4. Size:660K  ncepower
 nceap0135ak.pdf

NCEAP01ND35AG NCEAP01ND35AG

http://www.ncepower.com NCEAP0135AKNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP0135AK uses Super Trench technology that is uniquelyoptimized to provide the most efficient high frequency switchingperformance. Both conduction and switching power losses areminimized due to an extremely low combination of R and Q .DS(ON) gThis device is ideal for high-frequ

 7.5. Size:595K  ncepower
 nceap018n85ll.pdf

NCEAP01ND35AG NCEAP01ND35AG

http://www.ncepower.comNCEAP018N85LLNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEAP018N85LL uses Super Trench II technology that is V =85V,I =330ADS Duniquely optimized to provide the most efficient high frequencyR =1.3m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate c

 7.6. Size:815K  ncepower
 nceap018n60gu.pdf

NCEAP01ND35AG NCEAP01ND35AG

NCEAP018N60GUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEAP018N60GU uses Super Trench II technology that is V =60V,I =256A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =1.6 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power E

 7.7. Size:597K  ncepower
 nceap016n10ll.pdf

NCEAP01ND35AG NCEAP01ND35AG

http://www.ncepower.comNCEAP016N10LLNCE Automotive N-Channel Super Trench II Power MOSFETDescription General FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =385ADS Duniquely optimized to provide the most efficient high frequency R =1.2m, typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate

 7.8. Size:934K  ncepower
 nceap016n85ll.pdf

NCEAP01ND35AG NCEAP01ND35AG

NCEAP016N85LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =385ADS Duniquely optimized to provide the most efficient high frequencyR =1.2m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses Excel

 7.9. Size:822K  ncepower
 nceap018n60agu.pdf

NCEAP01ND35AG NCEAP01ND35AG

NCEAP018N60AGUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETGeneral FeaturesDescription V =60V,I =270A (Silicon Limited)DS DThe NCEAP018N60AGU uses Super Trench II technology that isR =1.4 m (typical) @ V =10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =1.8 m (typical) @ V =4.5VDS(ON) GSswitching perfor

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: FQD4P40 | STD2N62K3 | FQD1N60CTF | CEP10N65 | KF12N60P

 

 
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