All MOSFET. NCEAP40ND40G Datasheet

 

NCEAP40ND40G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCEAP40ND40G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 43 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 17.6 nC
   trⓘ - Rise Time: 2.8 nS
   Cossⓘ - Output Capacitance: 318 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: DFN5X6-8L

 NCEAP40ND40G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCEAP40ND40G Datasheet (PDF)

 ..1. Size:693K  ncepower
 nceap40nd40g.pdf

NCEAP40ND40G NCEAP40ND40G

http://www.ncepower.comNCEAP40ND40GNCE Automotive N-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =40V,I =43ADS DThe NCEAP40ND40G uses Super Trench technology that isR =8.2m (typical) @ V =10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =10.4m (typical) @ V =4.5VDS(ON) GSswitching performance. Both conduction and swi

 3.1. Size:721K  ncepower
 nceap40nd40ag.pdf

NCEAP40ND40G NCEAP40ND40G

NCEAP40ND40AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND40AG uses Super Trench technology that is V =40V,I =43ADS Duniquely optimized to provide the most efficient high frequency R =9.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses Excellent gate charg

 5.1. Size:643K  ncepower
 nceap40nd80ag.pdf

NCEAP40ND40G NCEAP40ND40G

NCEAP40ND80AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND80AG uses Super Trench technology that is V =40V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =4.7m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R p

 5.2. Size:676K  ncepower
 nceap40nd80g.pdf

NCEAP40ND40G NCEAP40ND40G

http://www.ncepower.com NCEAP40ND80GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND80G uses Super Trench technology that is V =40V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =4.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =5.5m (typical) @ V =4.5VDS(

 5.3. Size:727K  ncepower
 nceap40nd60ag.pdf

NCEAP40ND40G NCEAP40ND40G

NCEAP40ND60AGhttp://www.ncepower.comNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND60AG uses Super Trench technology that is V =40V,I =65ADS Duniquely optimized to provide the most efficient high frequency R =8.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses Excellent gate charge x R produ

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK2419 | IXFT12N100Q

 

 
Back to Top