All MOSFET. NCEAP40P60K Datasheet

 

NCEAP40P60K MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCEAP40P60K
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 73 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 39 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO-252

 NCEAP40P60K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCEAP40P60K Datasheet (PDF)

 ..1. Size:482K  ncepower
 nceap40p60k.pdf

NCEAP40P60K NCEAP40P60K

http://www.ncepower.comNCEAP40P60KNCE P-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =-40V,I =-73ADS DThe NCEAP40P60K uses Super Trench technology that isR =8.8m (typical) @ V =-10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =12.5m (typical) @ V =-4.5VDS(ON) GSswitching performance. Both conduction and switching po

 4.1. Size:772K  ncepower
 nceap40p60g.pdf

NCEAP40P60K NCEAP40P60K

http://www.ncepower.comNCEAP40P60GNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40P60G uses Super Trench technology that is uniquely V =-40V,I =-68ADS Doptimized to provide the most efficient high frequency switching R =8.8m (typical) @ V =-10VDS(ON) GSperformance. Both conduction and switching power losses are minimized R =12.5m

 6.1. Size:676K  ncepower
 nceap40pt15g.pdf

NCEAP40P60K NCEAP40P60K

http://www.ncepower.com NCEAP40PT15GNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40PT15G uses Super Trench technology that is V =-40V,I =-160ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching power R =3.9m (typical) @ V =-4.5V

 6.2. Size:907K  ncepower
 nceap40p80k.pdf

NCEAP40P60K NCEAP40P60K

http://www.ncepower.comNCEAP40P80KNCE Automotive P-Channel Super Trench Power MOSFETDescriptionThe NCEAP40P80K uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequency swit

 6.3. Size:703K  ncepower
 nceap40pt12k.pdf

NCEAP40P60K NCEAP40P60K

http://www.ncepower.com NCEAP40PT12KNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40PT12K uses Super Trench technology that is V =-40V,I =-160A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =4.1m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching power R =5.9m (t

 6.4. Size:697K  ncepower
 nceap40pt15d.pdf

NCEAP40P60K NCEAP40P60K

http://www.ncepower.comNCEAP40PT15DNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40PT15D uses Super Trench technology that is V =-40V,I =-195ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching power R =3.8m (typical) @ V =-4.5

 6.5. Size:674K  ncepower
 nceap40p80g.pdf

NCEAP40P60K NCEAP40P60K

http://www.ncepower.comNCEAP40P80GNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40P80G uses Super Trench technology that is uniquely V =-40V,I =-80ADS Doptimized to provide the most efficient high frequency switching R =6.3m (typical) @ V =-10VDS(ON) GSperformance. Both conduction and switching power losses are R =9.0m (typical)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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