NCEAP40PT12K Specs and Replacement
Type Designator: NCEAP40PT12K
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 1500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO252
NCEAP40PT12K substitution
- MOSFET ⓘ Cross-Reference Search
NCEAP40PT12K datasheet
nceap40pt12k.pdf
http //www.ncepower.com NCEAP40PT12K NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40PT12K uses Super Trench technology that is V =-40V,I =-160A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =4.1m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =5.9m (t... See More ⇒
nceap40pt15g.pdf
http //www.ncepower.com NCEAP40PT15G NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40PT15G uses Super Trench technology that is V =-40V,I =-160A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =3.9m (typical) @ V =-4.5V... See More ⇒
nceap40pt15d.pdf
http //www.ncepower.com NCEAP40PT15D NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40PT15D uses Super Trench technology that is V =-40V,I =-195A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =3.8m (typical) @ V =-4.5... See More ⇒
nceap40p60g.pdf
http //www.ncepower.com NCEAP40P60G NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40P60G uses Super Trench technology that is uniquely V =-40V,I =-68A DS D optimized to provide the most efficient high frequency switching R =8.8m (typical) @ V =-10V DS(ON) GS performance. Both conduction and switching power losses are minimized R =12.5m ... See More ⇒
Detailed specifications: NCEAP40ND40G, NCEAP40ND60AG, NCEAP40ND80AG, NCEAP40ND80G, NCEAP40P60G, NCEAP40P60K, NCEAP40P80G, NCEAP40P80K, IRFP064N, NCEAP40PT15D, NCEAP40PT15G, NCEAP40T11AG, NCEAP40T11AK, NCEAP40T11G, NCEAP40T11K, NCEAP40T13AGU, NCEAP40T14AK
Keywords - NCEAP40PT12K MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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