All MOSFET. NCEAP40T11K Datasheet

 

NCEAP40T11K Datasheet and Replacement


   Type Designator: NCEAP40T11K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 1050 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: TO-252
 

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NCEAP40T11K Datasheet (PDF)

 ..1. Size:637K  ncepower
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NCEAP40T11K

NCEAP40T11Khttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP40T11K uses Super Trench technology that is uniquelyoptimized to provide the most efficient high frequency switchingperformance. Both conduction and switching power losses areminimized due to an extremely low combination of R and Q . ThisDS(ON) gdevice is ideal for high-freq

 4.1. Size:897K  ncepower
 nceap40t11ak.pdf pdf_icon

NCEAP40T11K

NCEAP40T11AKhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP40T11AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching power lossesare minimized due to an extremely low combination of R andDS(ON)Q . This device is ideal for high-freq

 4.2. Size:543K  ncepower
 nceap40t11g.pdf pdf_icon

NCEAP40T11K

http://www.ncepower.comNCEAP40T11GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40T11G uses Super Trench technology that is V =40V,I =150A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =2.2m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses R =3.3m

 4.3. Size:918K  ncepower
 nceap40t11ag.pdf pdf_icon

NCEAP40T11K

http://www.ncepower.comNCEAP40T11AGNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T11AG uses Super Trench technology that is V =40V,I =150A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =2.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excell

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Datasheet: NCEAP40P80G , NCEAP40P80K , NCEAP40PT12K , NCEAP40PT15D , NCEAP40PT15G , NCEAP40T11AG , NCEAP40T11AK , NCEAP40T11G , IRF840 , NCEAP40T13AGU , NCEAP40T14AK , NCEAP40T14G , NCEAP40T15AGU , NCEAP40T15GU , NCEAP40T17AD , NCEAP40T17AG , NCEAP40T20AD .

History: APT6025SVR

Keywords - NCEAP40T11K MOSFET datasheet

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