NCEAP40T20AGU
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEAP40T20AGU
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 220
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 213
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 91
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 1790
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0013
Ohm
Package:
DFN5X6-8L
NCEAP40T20AGU
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEAP40T20AGU
Datasheet (PDF)
..1. Size:777K ncepower
nceap40t20agu.pdf 
http://www.ncepower.comNCEAP40T20AGUNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T20AGU uses Super Trench technology that is V =40V,I =300A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =0.95m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Exc
3.1. Size:932K ncepower
nceap40t20all.pdf
http://www.ncepower.comNCEAP40T20ALLNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe series of devices uses Super Trench technology that is V =40V,I =360A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =1.1m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Exce
3.2. Size:736K ncepower
nceap40t20ad.pdf
http://www.ncepower.comNCEAP40T20ADNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T20AD uses Super Trench technology that is V =40V,I =295A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.3m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excelle
6.1. Size:615K ncepower
nceap40t13agu.pdf
http://www.ncepower.com NCEAP40T13AGUNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T13AGU uses Super Trench technology that is V =40V,I =165A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =2.0m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excel
6.2. Size:655K ncepower
nceap40t35all.pdf
http://www.ncepower.comNCEAP40T35ALLNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T35ALL uses Super Trench technology that is V =40V,I =570A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =0.63m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Exc
6.3. Size:566K ncepower
nceap40t14ak.pdf
NCEAP40T14AKhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP40T14AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching power lossesare minimized due to an extremely low combination of R andDS(ON)Q . This device is ideal for high-freq
6.4. Size:829K ncepower
nceap40t15agu.pdf
NCEAP40T15AGUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T15AGU uses Super Trench technology that is V =40V,I =240A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.35m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses
6.5. Size:897K ncepower
nceap40t11ak.pdf
NCEAP40T11AKhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP40T11AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching power lossesare minimized due to an extremely low combination of R andDS(ON)Q . This device is ideal for high-freq
6.6. Size:762K ncepower
nceap40t15gu.pdf
http://www.ncepower.com NCEAP40T15GUNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40T15GU uses Super Trench technology that is uniquely V =40V,I =240A (Silicon Limited)DS Doptimized to provide the most efficient high frequency switching R =1.09m , typical@ V =10VDS(ON) GSperformance. Both conduction and switching power losses are R =
6.7. Size:871K ncepower
nceap40t35avd.pdf
http://www.ncepower.comNCEAP40T35AVDNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T35AVD uses Super Trench technology that is V =40V,I =480A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =0.68m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate
6.8. Size:543K ncepower
nceap40t11g.pdf
http://www.ncepower.comNCEAP40T11GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40T11G uses Super Trench technology that is V =40V,I =150A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =2.2m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses R =3.3m
6.9. Size:637K ncepower
nceap40t11k.pdf
NCEAP40T11Khttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP40T11K uses Super Trench technology that is uniquelyoptimized to provide the most efficient high frequency switchingperformance. Both conduction and switching power losses areminimized due to an extremely low combination of R and Q . ThisDS(ON) gdevice is ideal for high-freq
6.10. Size:918K ncepower
nceap40t11ag.pdf
http://www.ncepower.comNCEAP40T11AGNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T11AG uses Super Trench technology that is V =40V,I =150A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =2.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excell
6.11. Size:640K ncepower
nceap40t17ad.pdf
http://www.ncepower.com NCEAP40T17ADNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T17AD uses Super Trench technology that is V =40V,I =275A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.4m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellen
6.12. Size:711K ncepower
nceap40t17ag.pdf
NCEAP40T17AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T17AG uses Super Trench technology that is V =40V,I =235A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.4m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excell
6.13. Size:769K ncepower
nceap40t14g.pdf
http://www.ncepower.comNCEAP40T14GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40T14G uses Super Trench technology that is V =40V,I =210ADS Duniquely optimized to provide the most efficient high frequency R =1.6m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =2.3m (typical) @ V =4.5VDS(
Datasheet: FMM50-025TF
, FMM60-02TF
, FMM75-01F
, FMP26-02P
, FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, RFP50N06
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, GMM3x180-004X2-SMD
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
.
