NCEAP6035AG MOSFET Datasheet: N-Ch, 60V, 48A. Full specification with pinout and replacement list

NCEAP6035AG Specs and Replacement

   Type Designator: NCEAP6035AG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 48 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 2.7 nS
   Cossⓘ - Output Capacitance: 156 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
   Package: DFN5X6-8L

NCEAP6035AG substitution

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NCEAP6035AG datasheet

..1. Size:740K ncepower
nceap6035ag.pdf pdf_icon

http //www.ncepower.com NCEAP6035AG NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP6035AG uses Super Trench technology that is V =60V,I =48A DS D uniquely optimized to provide the most efficient high frequency R =9.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =12.5m (typical) @ V =4.5V DS(O... See More ⇒

7.1. Size:713K ncepower
nceap60t15g.pdf pdf_icon

http //www.ncepower.com NCEAP60T15G NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R ... See More ⇒

7.2. Size:759K ncepower
nceap6055agu.pdf pdf_icon

http //www.ncepower.com NCEAP6055AGU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP6055AGU uses Super Trench technology that is V =60V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.7m (typical) @ V =4.5V DS... See More ⇒

7.3. Size:723K ncepower
nceap60t20d.pdf pdf_icon

http //www.ncepower.com NCEAP60T20D NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60T20D uses Super Trench technology that is uniquely V =60V,I =250A DS D optimized to provide the most efficient high frequency switching R =1.8m (typical) @ V =10V DS(ON) GS performance. Both conduction and switching power losses are Excellent gate c... See More ⇒