All MOSFET. NCEP008NH40AGU Datasheet

 

NCEP008NH40AGU Datasheet and Replacement


   Type Designator: NCEP008NH40AGU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 353 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 2000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00095 Ohm
   Package: PDFN5X6-8L
 

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NCEP008NH40AGU Datasheet (PDF)

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NCEP008NH40AGU

http://www.ncepower.com NCEP008NH40AGUNCE N-Channel Super Trench III Power MOSFETDescription General FeaturesThe NCEP008NH40AGU uses Super Trench III technologyV =40V,I =353ADS Dthat is uniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andswitching power losses are minimized due to an

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NCEP008NH40AGU

NCEP008NH40ASLhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP008NH40ASL uses Super Trench III technologyV =40V,I =397ADS Dthat is uniquely optimized to provide the most efficient highR =0.72m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andswitching power losses are minimized due to

 3.1. Size:662K  ncepower
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NCEP008NH40AGU

http://www.ncepower.comNCEP008NH40GUNCE N-Channel Super Trench III Power MOSFETDescription General FeaturesThe NCEP008NH40GU uses Super Trench III technologyV =40V,I =375ADS Dthat is uniquely optimized to provide the most efficient high R =0.6m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =0.95m (typical) @ V =4.5VDS(ON) GSswitch

 3.2. Size:650K  ncepower
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NCEP008NH40AGU

http://www.ncepower.comNCEP008NH40SLNCE Automotive N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP008NH40SL uses Super Trench III technology V =40V,I =420ADS Dthat is uniquely optimized to provide the most efficient highR =0.6m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andR =0.95m (typical) @ V =4.5VDS

Datasheet: NCEAP60ND60G , NCEAP60T12AD , NCEAP60T12AK , NCEAP60T15G , NCEAP60T20D , NCEB301G , NCEB301Q , NCEP008N30GU , 2N7000 , NCEP008NH40GU , NCEP0107AR , NCEP0107R , NCEP0109AR , NCEP0116AS , NCEP011N25QU , NCEP011NH25QU , NCEP012N85LL .

History: JCS2N70RH | 2SK2912 | 2SK3487 | AP9466GJ | BUK7E8R3-40E | BLF7G24LS-100 | BUK7507-30B

Keywords - NCEP008NH40AGU MOSFET datasheet

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