All MOSFET. FQB33N10 Datasheet

 

FQB33N10 Datasheet and Replacement


   Type Designator: FQB33N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 127 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 33 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: TO263 D2PAK
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FQB33N10 Datasheet (PDF)

 ..1. Size:938K  fairchild semi
 fqb33n10tm fqb33n10 fqi33n10.pdf pdf_icon

FQB33N10

October 2008QFETFQB33N10 / FQI33N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 33A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 62 pF)This advanced technology has been especial

 ..2. Size:1050K  onsemi
 fqb33n10.pdf pdf_icon

FQB33N10

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:1074K  fairchild semi
 fqb33n10l fqi33n10l.pdf pdf_icon

FQB33N10

October 2008QFETFQB33N10L / FQI33N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 33A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has been

 0.2. Size:1032K  fairchild semi
 fqb33n10ltm.pdf pdf_icon

FQB33N10

October 2008QFETFQB33N10L / FQI33N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 33A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has been

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Keywords - FQB33N10 MOSFET datasheet

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