NCEP01P35A Datasheet. Specs and Replacement

Type Designator: NCEP01P35A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm

Package: TO-220

NCEP01P35A substitution

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NCEP01P35A datasheet

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NCEP01P35A

Pb Free Product http //www.ncepower.com NCEP01P35A NCE P-Channel Super Trench Power MOSFET Description The NCEP01P35A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-... See More ⇒

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NCEP01P35A

http //www.ncepower.com NCEP01P35AG NCE P-Channel Super Trench Power MOSFET Description The NCEP01P35AG uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =-100V,I =-35A DS D switching performance. Both conduction and switching power R =37m (typical) @ V =-10V DS(ON) GS losses are minimized due to an extremely l... See More ⇒

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NCEP01P35A

Pb Free Product http //www.ncepower.com NCEP01P35AK NCE P-Channel Super Trench Power MOSFET Description The NCEP01P35AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g hig... See More ⇒

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NCEP01P35A

Pb Free Product http //www.ncepower.com NCEP01P60G NCE P-Channel Super Trench Power MOSFET Description The NCEP01P60G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =-100V,I =-55A DS D switching performance. Both conduction and switching power R =22m (typical) @ V =-10V DS(ON) GS losses are minimized due to... See More ⇒

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Detailed specifications: NCEP018N10LL, NCEP018N30GU, NCEP018N60, NCEP018N60AGU, NCEP018N60D, NCEP018N60GU, NCEP0190G, NCEP019N10T, IRF1407, NCEP01P35AG, NCEP01P35AK, NCEP01P40AGU, NCEP01P60AG, NCEP01P60G, NCEP01T10G, NCEP01T11D, NCEP01T12D

Keywords - NCEP01P35A MOSFET specs

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